On the origin of the yellow donor-acceptor pair emission in GaN

被引：13

作者：

Godlewski, M

Ivanov, VY

Kaminska, A

Zuo, HY

Goldys, EM

Tansley, TL

Barski, A

Rossner, U

Rouvicre, JL

Arlery, M

Grzegory, I

Suski, T

Porowski, S

Bergman, JP

Monemar, B

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[2] Macquarie Univ, Semicond Sci & Technol Lab, N Ryde, NSW 2109, Australia

[3] CEA, DRFMC, SP2M, Grenoble, France

[4] Polish Acad Sci, High Pressure Res Ctr, PL-01142 Warsaw, Poland

[5] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

来源：

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷

关键词：

GaN; photoluminescence; donor-acceptor pair recombination;

D O I：

10.4028/www.scientific.net/MSF.258-263.1149

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The "deep" yellow donor-acceptor pair (DAP) recombination is perhaps the most known but less understood photoluminescence (PL) emission of GaN. The origin of the "yellow" DAP emission was recently discussed based on the results of optically detected magnetic resonance (ODMR), stress and PL kinetics investigations. A deep donor-shallow acceptor transition was proposed based on the results of one ODMR study, whereas other ODMR experiments and stress and PL kinetics measurements were explained in terms of a shallow donor-deep acceptor transition model. The present FL investigations support the second model of the "yellow" DAP emission. However, the presence of an underlying second PL emission may explain the reasons for conflicting explanations of the results of the ODMR investigations by two different groups.

引用

页码：1149 / 1154

页数：6

共 9 条

[1] OBSERVATION OF OPTICALLY DETECTED MAGNETIC-RESONANCE IN GAN FILMS
GLASER, ER
KENNEDY, TA
CROOKHAM, HC
FREITAS, JA
KHAN, MA
OLSON, DT
KUZNIA, JN
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (19) : 2673 - 2675
[2] OPTICALLY DETECTED MAGNETIC-RESONANCE OF GAN FILMS GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION
GLASER, ER
KENNEDY, TA
DOVERSPIKE, K
ROWLAND, LB
GASKILL, DK
FREITAS, JA
KHAN, MA
OLSON, DT
KUZNIA, JN
WICKENDEN, DK
[J]. PHYSICAL REVIEW B, 1995, 51 (19): : 13326 - 13336
[3] GODLEWSKI M, IN PRESS ACTA PHYS P
[4] Properties of the yellow luminescence in undoped GaN epitaxial layers
Hofmann, DM
Kovalev, D
Steude, G
Meyer, BK
Hoffmann, A
Eckey, L
Heitz, R
Detchprom, T
Amano, H
Akasaki, I
[J]. PHYSICAL REVIEW B, 1995, 52 (23): : 16702 - 16706
[5] NATIVE DEFECTS AND DOPANTS IN GAN STUDIED THROUGH PHOTOLUMINESCENCE AND OPTICALLY DETECTED MAGNETIC-RESONANCE
KENNEDY, TA
GLASER, ER
FREITAS, JA
CARLOS, WE
KHAN, MA
WICKENDEN, DK
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (04) : 219 - 223
[6] TOWARDS THE IDENTIFICATION OF THE DOMINANT DONOR IN GAN
PERLIN, P
SUSKI, T
TEISSEYRE, H
LESZCZYNSKI, M
GRZEGORY, I
JUN, J
POROWSKI, S
BOGUSLAWSKI, P
BERNHOLC, J
CHERVIN, JC
POLIAN, A
MOUSTAKAS, TD
[J]. PHYSICAL REVIEW LETTERS, 1995, 75 (02) : 296 - 299
[7] MECHANISM OF YELLOW LUMINESCENCE IN GAN
SUSKI, T
PERLIN, P
TEISSEYRE, H
LESZCZYNSKI, M
GRZEGORY, I
JUN, J
BOCKOWSKI, M
POROWSKI, S
MOUSTAKAS, TD
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (15) : 2188 - 2190
[8] POINT-DEFECT ENERGIES IN THE NITRIDES OF ALUMINUM, GALLIUM, AND INDIUM
TANSLEY, TL
EGAN, RJ
[J]. PHYSICAL REVIEW B, 1992, 45 (19) : 10942 - 10950
[9] GROWTH OF GAN FILMS BY COMBINED LASER AND MICROWAVE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
ZHOU, B
LI, X
TANSLEY, TL
BUTCHER, KSA
PHILLIPS, MR
[J]. JOURNAL OF CRYSTAL GROWTH, 1995, 151 (3-4) : 249 - 253

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