Preparation and structure of annealed CuInSe2 electrodeposited films

被引：33

作者：

Tzvetkova, E ^{[1
]}

Stratieva, N

Ganchev, M

Tomov, I

Ivanova, K

Kochev, K

机构：

[1] Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, Sofia, Bulgaria

[2] Bulgarian Acad Sci, Inst Phys Chem, Sofia, Bulgaria

来源：

THIN SOLID FILMS | 1997年 / 311卷 / 1-2期

关键词：

chalcogens; heat treatment; semiconductors; X-ray diffraction;

D O I：

10.1016/S0040-6090(97)00263-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin CuInSe2 films were prepared by one-step electrodeposition process. The deposition was done in potentiostatic regime from an original electrolyte containing Cu+, In3+, Se4+ ions and thiocyanate as a complexing agent. The influence of deposition parameters (electrolyte composition and concentration, temperature of the electrolyte and deposition potential) on film composition was studied. Technological parameters for preparation of films with a desired composition were found. The as-deposited films were heat treated in Ar and in Se ambient. Morphology and structure of as-deposited and of annealed films were investigated. It was established that Se treatment was more effective than the annealing in Ar in addition to crystallite size. Phase formation after Se treatment was elucidated. It was found that composition of as-deposited films mainly conditioned phase composition after the selenization. (C) 1997 Elsevier Science S.A.

引用

页码：101 / 106

页数：6

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