Crystal Phase Quantum Dots

被引：222

作者：

Akopian, N. ^{[1
]}

Patriarche, G. ^{[2
]}

Liu, L. ^{[2
]}

Harmand, J. -C. ^{[2
]}

Zwiller, V. ^{[1
]}

机构：

[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands

[2] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

来源：

NANO LETTERS | 2010年 / 10卷 / 04期

关键词：

Nanowires; quantum dots; crystal phase; single photons; crystal structure; INDIUM-PHOSPHIDE NANOWIRES; TWINNING SUPERLATTICES; OPTICAL-PROPERTIES; ZINCBLENDE; SEMICONDUCTORS; GROWTH;

D O I：

10.1021/nl903534n

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In semiconducting nanowires, both zinc blende and wurtzite(1) crystal structures can coexist.(2-4) The band structure difference between the two structures can lead to charge confinement.(5) Here we fabricate and study single quantum dot devices(6) defined solely by crystal phase in a chemically homogeneous nanowire and observe single photon generation. More generally, our results show that this type of carrier confinement represents a novel degree of freedom in device design at the nanoscale.

引用

页码：1198 / 1201

页数：4

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