Amorphouslike density of gap states in single-crystal pentacene

被引:191
作者
Lang, DV
Chi, X
Siegrist, T
Sergent, AM
Ramirez, AP
机构
[1] Los Alamos Natl Lab, Los Alamos, NM 87545 USA
[2] Columbia Univ, New York, NY 10027 USA
[3] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevLett.93.086802
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We show that optical and electrical measurements on pentacene single crystals can be used to extract the density of states in the highest occupied molecular orbital-lowest unoccupied molecular orbital band gap. It is found that these highly purified crystals possess band tails broader than those typically observed in inorganic amorphous solids. Results on field-effect transistors fabricated from similar crystals imply that the gap state density is much larger within 5-10 nm of the gate dielectric. Thus, organic thin-film transistors for such applications as flexible displays might be significantly improved by reducing these defects.
引用
收藏
页码:086802 / 1
页数:4
相关论文
共 23 条
  • [1] Field-effect transistor on pentacene single crystal
    Butko, VY
    Chi, X
    Lang, DV
    Ramirez, AP
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (23) : 4773 - 4775
  • [2] Physics of organic electronic devices
    Campbell, IH
    Smith, DL
    [J]. SOLID STATE PHYSICS: ADVANCES IN RESEARCH AND APPLICATIONS, VOL 55, 2001, 55 : 1 - 117
  • [3] CONNELL GAN, 1979, AMORPHOUS SEMICONDUC, V36, P71
  • [4] Organic thin-film transistors: A review of recent advances
    Dimitrakopoulos, CD
    Mascaro, DJ
    [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2001, 45 (01) : 11 - 27
  • [5] Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO
  • [6] 2-9
  • [7] The dawn of organic electronics
    Forrest, S
    Burrows, P
    Thompson, M
    [J]. IEEE SPECTRUM, 2000, 37 (08) : 29 - 34
  • [8] DESTRUCTION OF TRIPLET EXCITONS IN ANTHRACENE BY INJECTED ELECTRONS
    HELFRICH, W
    [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (10) : 401 - +
  • [9] Jarosz G, 1996, ADV MATER OPT ELECTR, V6, P379, DOI 10.1002/(SICI)1099-0712(199609)6:5/6<379::AID-AMO260>3.0.CO
  • [10] 2-K