Cellular handset integration - SIP vs. SOC

被引:11
作者
Krenik, W [1 ]
Buss, D [1 ]
Rickert, P [1 ]
机构
[1] Texas Instruments Inc, Dallas, TX 75243 USA
来源
PROCEEDINGS OF THE IEEE 2004 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2004年
关键词
D O I
10.1109/CICC.2004.1358737
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Cellular handsets are rapidly evolving from voice-only products to highly featured designs featuring color displays, games, audio, video, cameras, Bluetooth, GPS, WLAN, highspeed wide-area data services, and other advanced features. This remarkable expansion in capability, in conjunction with ongoing customer demands for sleek, ergonomic, and reasonably priced handsets with good battery life, places considerable pressure on handset component providers to aggressively integrate the handset electronics. System-in-Package (SIP) integration and System-on-Chip (SOC) integration are two possible approaches. This paper investigates the tradeoffs between SIP and SOC integration for the integration of memories, analog, and RF electronics in the handset.
引用
收藏
页码:63 / 70
页数:8
相关论文
共 22 条
[1]  
[Anonymous], IEDM
[2]  
BENAISSA K, 2003, IEEE T EL DEV MARCH, P567
[3]  
Buss D., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P423, DOI 10.1109/IEDM.1999.824184
[4]  
BUSS D, 2003, IEEE T ELECTRON DEV, P546
[5]  
BUSS D, ISSCC 2002, P18
[6]  
CHATTERJEE A, IEDM 2001, P211
[7]   Current and future ferroelectric nonvolatile memory technology [J].
Fox, GR ;
Chu, F ;
Davenport, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (05) :1967-1971
[8]  
GILL M, ISSCC 2002, P202
[9]  
GOMEZ G, ISSCC 2002
[10]  
HADNAGY D, 2001, INTEGR FERROELECTR, V37, P215