Gas-sensing characteristics of one-electrode gas sensors based on doped In2O3 ceramics

被引：55

作者：

Korotcenkov, G

Boris, I

Brinzari, V

Golovanov, V

Lychkovsky, Y

Karkotsky, G

Cornet, A

Rossinyol, E

Rodrigue, J

Cirera, A

机构：

[1] Tech Univ Moldova, Lab Microelect & Optoelect, Kishinev 2004, Moldova

[2] S Ukrainian Univ, Odessa, Ukraine

[3] INNOVATSENSOR Ltd, Minsk, BELARUS

[4] Univ Barcelona, Barcelona, Spain

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2004年 / 103卷 / 1-2期

关键词：

In2O3; one-electrode sensor; doping; characterization; gas response;

D O I：

10.1016/j.snb.2004.02.016

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Structural and gas-sensing properties of In2O3-based one-electrode gas sensors have been analyzed by their dependence on the doping by oxides of I-VIII group elements. It was found that addition of Cu, Ga, and Zn results in increase of the gas response to CO and H-2. Doping by P increases the sensitivity to CH4 and H-2. The essential improvement of the selectivity to H-2 and CH4 in the environments that contain combustion gases can be reached by modification of In2O3 by Cu, P, and Mn. The influence of air humidity on sensing properties of doped In2O3 has been also studied. It was concluded that doping of In2O3 ceramics leads to the substantial changes both in the film's resistance and structure that are considered as the main factors controlling the gas response of one-electrode gas sensors. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：13 / 22

页数：10

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