Rb16Cd25.39(3)Sb36: An Electron-Deficient Zintl Phase Containing Infinite Dodecahedron Chains

被引:14
作者
Zheng, Wu-Zui [1 ,2 ]
Wang, Peng [1 ,2 ]
Wu, Li-Ming [1 ]
Liu, Yi [1 ]
Chen, Ling [1 ]
机构
[1] Chinese Acad Sci, Fujian Inst Res Struct Matter, Key Lab Optoelect Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
基金
中国国家自然科学基金;
关键词
THERMOELECTRIC PROPERTIES; TRANSPORT-PROPERTIES; PHYSICAL-PROPERTIES; CRYSTAL-STRUCTURES; PENTAGONAL TUBES; COMPOUND; SB; SEMICONDUCTORS; SR; EU;
D O I
10.1021/ic100360n
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
A novel ternary antimonide Rb16Cd25.39(3)Sb36 has been synthesized by a solid-state reaction of the appropriate amount of elements in a welded niobium tube at 530 degrees C. The compound crystallizes in orthorhombic space group Cmcm (No. 63) with. a = 16.499(5) angstrom, b = 12.391(4) angstrom, c= 12.400(4) angstrom, and Z= 1. The structure features a new 3D network constructed of chains of Rb+-centered dodecahedra running along [001]. The atomic distribution of the Cd8Sb12 dodecahedron presents an energetically favored pattern without any Cd-Cd bonding. The formation of the phase and the occurrence of a very narrow phase width of Rb16Cd24+x,Sb-36 [0.94(2) <= x <= 1.47(3)] have been studied in detail. The Fermi level of the title compound is expected to be located between those of the hypothetical models of "[Rb16Cd24Sb36](0)" (I, poor metallic) and "[Rb16Cd24Sb36] + 4e" (II, narrow-band-gap semiconductor), which agrees well with the experimental measurements. In the temperature range of 300-473 K, the as-synthesized Rb16Cd25.39(3)Sb36 exhibits p-type semiconductor behavior and shows temperature-independent thermal conductivities (around 0.49 W/m-K). The electrical conductivity, Seebeck coefficient, and figure of merit (ZT) of Rb16Cd25.39(3)Sb36 are temperature-dependent; these values are 57.4 S/cm, +81.4 mu V/K, and 0.04, respectively, at 466 K.
引用
收藏
页码:5890 / 5896
页数:7
相关论文
共 36 条
[1]  
[Anonymous], CRYSTALCLEAR VERSION
[2]   Thermoelectric properties of the new polytelluride Ba3Cu14-δTe12 [J].
Assoud, Abdeljalil ;
Thomas, Stephanie ;
Sutherland, Brodie ;
Zhang, Huqin ;
Tritt, Terry M. ;
Kleinke, Holger .
CHEMISTRY OF MATERIALS, 2006, 18 (16) :3866-3872
[3]  
Blaha P., 2001, CALCULATING CRYST PR, V60
[4]   Synthesis, structure and properties of the new rare-earth Zintl phase Yb11GaSb9 [J].
Bobev, S ;
Fritsch, V ;
Thompson, JD ;
Sarrao, JL ;
Eck, B ;
Dronskowski, R ;
Kauzlarich, SM .
JOURNAL OF SOLID STATE CHEMISTRY, 2005, 178 (04) :1071-1079
[5]   Yb14MnSb11:: New high efficiency thermoelectric material for power generation [J].
Brown, SR ;
Kauzlarich, SM ;
Gascoin, F ;
Snyder, GJ .
CHEMISTRY OF MATERIALS, 2006, 18 (07) :1873-1877
[6]   Thermoelectric properties of semi-conducting compound Zn4Sb3 [J].
Chitroub, M. ;
Besse, F. ;
Scherrer, H. .
JOURNAL OF ALLOYS AND COMPOUNDS, 2008, 460 (1-2) :90-93
[7]   Glasslike heat conduction in high-mobility crystalline semiconductors [J].
Cohn, JL ;
Nolas, GS ;
Fessatidis, V ;
Metcalf, TH ;
Slack, GA .
PHYSICAL REVIEW LETTERS, 1999, 82 (04) :779-782
[8]   Synthesis and Structural and Physical Properties of New Semiconducting Quaternary Tellurides: Ba4Ag3.95Ge2Te9 and Ba4Cu3.71Ge2Te9 [J].
Cui, Yanjie ;
Assoud, Abdeljalil ;
Kleinke, Holger .
INORGANIC CHEMISTRY, 2009, 48 (12) :5313-5319
[9]   EXACT EXCHANGE-ONLY POTENTIALS AND THE VIRIAL RELATION AS MICROSCOPIC CRITERIA FOR GENERALIZED GRADIENT APPROXIMATIONS [J].
ENGEL, E ;
VOSKO, SH .
PHYSICAL REVIEW B, 1993, 47 (20) :13164-13174
[10]   The crystal structure and magnetic properties of a new ferrimagnetic semiconductor:: Ca21Mn4Sb18 [J].
Holm, AP ;
Olmstead, MM ;
Kauzlarich, SM .
INORGANIC CHEMISTRY, 2003, 42 (06) :1973-1981