Application of group electronegativity concepts to the effective work functions of metal gate electrodes on high-κ gate oxides

被引：40

作者：

Schaeffer, J. K. ^{[1
]}

Gilmer, D. C. ^{[1
]}

Capasso, C. ^{[1
]}

Kalpat, S. ^{[1
]}

Taylor, B. ^{[1
]}

Raymond, M. V. ^{[1
]}

Triyoso, D. ^{[1
]}

Hegde, R. ^{[1
]}

Samavedam, S. B. ^{[1
]}

White, B. E., Jr. ^{[1
]}

机构：

[1] Freescale Semicond, Technol Solut Org, Austin, TX USA

来源：

MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 9-10期

关键词：

effective work function; electronegativity; metal gate electrode; hafnium dioxide;

D O I：

10.1016/j.mee.2007.04.130

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The empirical relationship between electronegativity and effective work function is applied to a diverse set of multielement electrode materials on hafnium dioxide (HfO2) gate dielectrics. To accommodate the multi-element nature of metal gate electrodes the group electronegativity of the metal was calculated from the geometric mean of electronegativity with respect to the volume stoichiometry of the constituent elements. Results show a reasonable linear fit that provides guidance for the selection of metal gate electrodes on HfO2. The group electronegativity concept is also extended to work function engineering via dielectric capping materials. The electronegativity trends provide insight into the relative charge neutrality levels of candidate dielectric capping materials and their subsequent impact on the metal effective work function.

引用

页码：2196 / 2200

页数：5

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