Thermoelectric transport properties of single bismuth nanowires

被引：8

作者：

Cronin, SB ^{[1
]}

Lin, YM ^{[1
]}

Black, MR ^{[1
]}

Rabin, O ^{[1
]}

Dresselhaus, MS ^{[1
]}

机构：

[1] MIT, Dept Phys, Cambridge, MA 02139 USA

来源：

XXI INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '02 | 2002年

关键词：

D O I：

10.1109/ICT.2002.1190310

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

We present a novel technique for measuring the power factor (Seebeck coefficient and resistivity) of a single isolated Bi nanowire. Electron beam lithography is used to pattern electrodes on top of a 40nm diameter Bi nanowire along with a microscopic heater and thermocouples. Running current through the heater generates a temperature gradient of 0.5K over a distance of 10 mum across the nanowire. Measurement of the Seebeck voltage of the nanowires was not possible due to the highly resistive and non-ohmic contacts. The non-linearity in the i(V) characteristics of the electrical contacts are understood by detailed modeling of the tunneling mechanism made through the electrical contacts., The prospect of using the poor contacts to perform tunneling spectroscopy of the electronic density of states of the nanowires is evaluated using this model.

引用

页码：243 / 248

页数：6

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