Evaluation of second generation DUV resists for advanced microprocessors

被引：2

作者：

Maltabes, JG ^{[1
]}

Yuan, C ^{[1
]}

Fu, CC ^{[1
]}

Sturtevant, JS ^{[1
]}

Blackley, S ^{[1
]}

Pressley, L ^{[1
]}

机构：

[1] Motorola Inc, Adv Prod Res & Dev Lab, Austin, TX 78721 USA

来源：

MICROELECTRONIC ENGINEERING | 1998年 / 42卷

关键词：

D O I：

10.1016/S0167-9317(98)00070-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

DUV lithography is being implemented in factories as fast as equipment makers can produce tools. The obstacles to implementation of DUV resists have been well characterized and their solutions are readily available for all to use. The most widely used resist to date has been APEX-E, developed by IBM nearly a decade ago. It is reaching its useful limit in state-of-the art processing,as are the other resists based on this technology. The second generation resists promise greater environmental stability, better exposure latitude, higher etch resistance and less substrate interaction. These advances are necessary to enhance the process windows and manufacturability as we move to smaller geometries. In addition they will allow the updating of older DUV processes to potentially reduce variation and increase yield. In this paper we will discuss the results of our work with several second generation resists, and their ability to meet process requirements for both imaging and pattern transfer, for the critical DUV lithography levels. We will also discuss the importance of shifting exposure wavelength to enhance yield and process latitude.

引用

页码：307 / 310

页数：4