Band gaps and charge distribution in quasi-binary (GaSb)1-x(InAs)x crystals

Pseudopotential investigation of energy band gaps and charge distribution in quasibinary (GaSb)(1-x)(InAs)(x) crystals has been reported. To the best of our knowledge, there had been no reported theoretical work on these materials. In agreement with experiment, the quasi-binary crystals of interest showed a significant narrowing of the optical band gap compared to the conventional GaxIn1-xAsySb1-y quaternary alloys (with x = I - y). Moreover, the absorption at the optical gaps indicated that (GaSb)(1-x)(InAs)(x) is a direct Gamma to Gamma band-gap semiconductor within a whole range of the x composition. The information derived from the present study predicts that the band gaps cross very important technological spectral regions and could be useful for thermophotovoltaic applications.