Taguchi optimization for the processing of Epon SU-8 resist

被引：33

作者：

Eyre, B ^{[1
]}

Blosiu, J ^{[1
]}

Wiberg, D ^{[1
]}

机构：

[1] CALTECH, Jet Prop Lab, Ctr Space Microelect Technol, Pasadena, CA 91109 USA

来源：

MICRO ELECTRO MECHANICAL SYSTEMS - IEEE ELEVENTH ANNUAL INTERNATIONAL WORKSHOP PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/MEMSYS.1998.659757

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Using the Taguchi technique an optimization experiment was performed to characterize the processing of Epon SU-8 negative photoresist. This photoresist has proven to be very sensitive to process variations and difficult to use. The Taguchi method reveals output sensitivity to variations in control factors. Using five processing parameters as control factors, experiments were performed and results were evaluated by comparison to ideal output characteristics, Analyzing the results, a proposed fabrication process was derived from optimizing the control factors for the best overall mean across all the outputs. The experiment was repeated for three film thicknesses: 50 mu m; 100 mu m, and 220 mu m. The desired output characteristics were straight sidewall profile, fine fine and space resolution, and adhesion to substrate. Tables shaw optimized processing parameters for these three film thicknesses.

引用

页码：218 / 222

页数：3