Ozone sensing properties of In2O3-based semiconductor thick films

被引：58

作者：

Kim, SR

Hong, HK

Kwon, CH

Yun, DH

Lee, K

Sung, YK

机构：

[1] LG Corp Inst Technol, Devices & Mat Lab, Seocho Gu, Seoul 137140, South Korea

[2] Korea Univ, Dept Elect Engn, Sungbuk Ku, Seoul 136701, South Korea

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2000年 / 66卷 / 1-3期

关键词：

oxide semiconductor; ozone sensor; stable sensitivity;

D O I：

10.1016/S0925-4005(99)00468-2

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Ozone sensing properties of In2O3-based semiconductor thick films have been investigated. The In2O3 sensing layer is quite sensitive to ozone, but the rapid saturation in sensitivity cannot be obtained. The addition of Fe2O3 (3 wt.%) into In2O3 and the high temperature firing of the mixed powder give rise to a remarkable improvement in response and recovery, although the sensitivity decreases. The sensing layer fired at 1300 degrees C and operated at 550 degrees C shows excellent properties such as fast response, stable sensitivity, and rapid recovery. In addition to it, the sensor shows a good linearity with ozone concentration and a good reproducibility. The preliminary results clearly demonstrated that the sensor was successfully applied for the ozone detection of parts per billion range. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：59 / 62

页数：4