Uniformity of semi-insulating InP wafers obtained by Fe diffusion

被引：14

作者：

Fornari, R

Görög, T

Jimenez, J

De la Puente, E

Avella, M

Grant, I

Brozel, M

Nicholls, M

机构：

[1] CNR, Ist MASPEC, I-43010 Parma, Italy

[2] Univ Valladolid, Dept Fis Mat Condensada, E-47011 Valladolid, Spain

[3] Wafer Technol Ltd, Milton Keynes MK15 8HJ, Bucks, England

[4] UMIST, Ctr Elect Mat, Manchester M60 1QL, Lancs, England

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 09期

关键词：

D O I：

10.1063/1.1315327

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

As-cut semiconducting InP wafers were submitted to Fe diffusion at high temperature. The subsequent electrical characterization showed that the wafers became semi-insulating, with resistivities well above 10(7) Omega cm and mobilities in the range of 3000-4000 cm(2)/V s. In this article a study on the uniformity of Fe-diffused semi-insulating InP wafers is presented. The photoconductivity, photoluminescence and resistivity mapping showed that the short range uniformity is improved with respect to typical as-grown Fe-doped InP. However, sometimes the wafers exhibit long range gradients of resistivity and luminescence intensity which are believed to be associated to temperature gradients inside the annealing furnace. (C) 2000 American Institute of Physics. [S0021-8979(00)02922-4].

引用

页码：5225 / 5229

页数：5

共 16 条

[1]

ALVAREZ A, UNPUB

[2]

ASAHI T, 1999, P 11 INT C INP REL M, P249

[3] Uniformity and physical properties of semi-insulating Fe-doped InP after wafer or ingot annealing [J].

Avella, M ;

Jimenez, J ;

Alvarez, A ;

Fornari, R ;

Gilioli, E ;

Sentiri, A .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (08) :3836-3845

[4]

BLISS DF, 1995, P 7 INT C INP REL MA, P678

[5] INFLUENCE OF IRON CONTENT ON ELECTRICAL CHARACTERISTICS AND THERMAL-STABILITY OF LEC INDIUM-PHOSPHIDE [J].

FORNARI, R .

JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (12) :1043-1048

[6] On the electrical activity of Fe in LEC indium phosphide [J].

Fornari, R .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (03) :246-250

[7] Homogeneity of thermally annealed Fe-doped InP wafers [J].

Fornari, R ;

Gilioli, E ;

Sentiri, A ;

Mignoni, G ;

Avella, M ;

Jimenez, J ;

Alvarez, A ;

Gonzalez, MA .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 44 (1-3) :233-237

[8]

FORNARI R, 1993, P 7 SEM MAT C IOP BR, P39

[9]

LHARIDON H, 1991, APPL SURF SCI, V90, P23

[10] CONTACTLESS DETERMINATION OF THE CONDUCTIVITY IN SEMI-INSULATORS [J].

MULLER, P .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 78 (01) :41-51

← 1 2 →