Rapid-incorporation path of growth units on surfaces during crystal growth

The incorporation rates of growth units into kink sites on growth surfaces of crystals by series processes via intermediate sites from solution are investigated by changing tie energy states of the intermediate sites and the activation energies for the processes. A simple model where the activation energies are proportional to the differences of the energy states between sites is taken in the present study to illustrate the concept. The model shows that the incorporation rate of a series process via an intermediate site in a certain energy state becomes much larger than those via intermediate sites in different energy states, suggesting the existence of a rapid-incorporation path in surface kinetics of crystal growth.