Status and outlook of emerging nonvolatile memory technologies

被引：72

作者：

Müller, G ^{[1
]}

Happ, T ^{[1
]}

Kund, M ^{[1
]}

Lee, GY ^{[1
]}

Nagel, N ^{[1
]}

Sezi, R ^{[1
]}

机构：

[1] Infineon Technol AG, MP TD NMP, D-81609 Munich, Germany

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419223

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews the concept, status and challenges of emerging nonvolatile memory technologies. The technologies that are discussed and compared to state of the art Flash technology are the Conductive Bridging RAM (CBRAM), the Ferro-electric RAM (FeRAM), the Magneto-resistive RAM (MRAM), the Organic RAM (ORAM) and the Phase Change RAM (PCRAM).

引用

页码：567 / 570

页数：4