Optical properties and crystallization characteristics of Ge-doped Sb70Te30 phase change recording film

被引:22
作者
Her, YC [1 ]
Hsu, YS [1 ]
机构
[1] Natl Chung Hsing Univ, Dept Mat Engn, Taichung 40227, Taiwan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 2B期
关键词
eutectic Sb70Te30; fast-growth; crystallization temperature; activation energy; crystallization speed;
D O I
10.1143/JJAP.42.804
中图分类号
O59 [应用物理学];
学科分类号
摘要
Eutectic Sb70Te30 fast-growth material is one of the promising candidates for high data transfer rate recording. However, it also shows the disadvantage of poor thermal stability. Germanium, with a high value of glass transition temperature, is expected to play the role of thermal stabilizer. It was found that the effect of Ge doping on reflectivity difference between as-deposited and annealed states is not significant. However, the addition of Ge element into Sb70Te30 can reduce the initialization or erasure power, and increase the stability of the phase change recording media at room temperature at the same time. Unfortunately, doping Ge element would also slow down the crystallization speed of eutectic Sb70Te30 recording film.
引用
收藏
页码:804 / 808
页数:5
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