Optically detected magnetic resonance studies of the surface/interface properties of II-VI semiconductor quantum dots

被引：48

作者：

Lifshitz, E ^{[1
]}

Glozman, A

Litvin, ID

Porteanu, H

机构：

[1] Technion Israel Inst Technol, Dept Chem, IL-32000 Haifa, Israel

[2] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel

[3] Tech Univ Munich, Phys Dept E16, D-85747 Garching, Germany

来源：

JOURNAL OF PHYSICAL CHEMISTRY B | 2000年 / 104卷 / 45期

关键词：

D O I：

10.1021/jp000876s

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The described study concentrated on the investigation of II-VI semiconductor quantum dots, prepared as colloidal species imbedded in phosphate glass, or chemically deposited on a substrate. The ultimate goal of the present research was concerned with the examination of the influence of the surface/interface quality on the optical properties of those quantum dots. This was examined by the utilization of optically detected magnetic resonance spectroscopy. This method reflected knowledge of the chemical identity of the surface/interface trapping site, and trapped electron and trapped hole recombination mechanism. It also distinguished between radiative and nonradiative processes, determined the spin-lattice relaxation, estimated the trapped electron-hole exchange mechanism and the distribution pf defects at the surface.

引用

页码：10449 / 10461

页数：13

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