SiO2/Si selectivity in high density CHF3/CH4 plasmas:: Role of the fluorocarbon layer

被引：30

作者：

Rolland, L ^{[1
]}

Peignon, MC ^{[1
]}

Cardinaud, C ^{[1
]}

Turban, G ^{[1
]}

机构：

[1] Inst Mat Nantes Jean Rouxel, Lab Plasmas & Couches Minces, F-44322 Nantes 03, France

来源：

MICROELECTRONIC ENGINEERING | 2000年 / 53卷 / 1-4期

关键词：

Deposition - Ellipsometry - Fluorocarbons - Methane - Plasma diagnostics - Semiconducting silicon - Silica - X ray photoelectron spectroscopy;

D O I：

10.1016/S0167-9317(00)00337-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new high density plasma SiO2 etching process based on CHF3/CH4 mixture is investigated by means of plasma diagnostics and surface analysis. Selectivity as high as 15 with respect to silicon has been obtained. Besides, a slight decrease of the SiO2 etch rate is observed as compared to CHF3. Deposition of a carbon-rich fluorocarbon layer on the SiO2 is thought to play an important role in the etching mechanism, as generally described for Si.

引用

页码：375 / 379

页数：5

共 5 条

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