Effect of selenium on the galvanomagnetic properties of the diluted magnetic semiconductor Hg1-xMnxTe1-ySey

被引：7

作者：

Kulbachinskii, VA ^{[1
]}

Churilov, IA ^{[1
]}

Maryanchuk, PD ^{[1
]}

Lunin, RA ^{[1
]}

机构：

[1] Moscow MV Lomonosov State Univ, Moscow 119899, Russia

来源：

SEMICONDUCTORS | 1998年 / 32卷 / 01期

关键词：

Magnetic Field; Selenium; Magnetic Material; Electromagnetism; Magnetic Semiconductor;

D O I：

10.1134/1.1187367

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The galvanomagnetic properties of single crystals of the diluted magnetic semiconductor Hg1-xMnxTe1-ySey (0.01<y<0.1) with x=0.05 and 0.14 have been investigated in the temperature range 4.2-300 K. Peculiarities of the temperature dependence of the Hall coefficient R-H and its complicated behavior in a magnetic field are quantitatively explained by the existence of three groups of current carriers: electrons and two types of holes with different mobilities for which the temperature dependence of concentration and mobility was obtained. A transition from p-type to n-type conductivity was observed with increase of Se content, alongside with a simultaneous change of sign of the magnetoresistance from negative to positive. (C) 1998 American Institute of Physics.

引用

页码：49 / 51

页数：3

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