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Chemical order and selection of the mechanism for strain relaxation in epitaxial FePd(Pt) thin layers

被引：17
作者：
Halley, D
Marty, A
Bayle-Guillemaud, P
Gilles, B
Attane, JP
Samson, Y
机构：
[1] CEA Grenoble, Dept Rech Fondamentale Mat Condensee, Serv Phys Mat & Microstruct, F-38054 Grenoble, France
[2] CNRS, Lab Thermodynam & Physicochim Met, F-38402 St Martin Dheres, France
来源：
PHYSICAL REVIEW B | 2004年 / 70卷 / 17期
关键词：
D O I：
10.1103/PhysRevB.70.174438
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We observed that the relaxation mechanism of the epitaxial strain is dramatically dependent on the chemical ordering within the L1(0) structure in FePd(Pt) thin films. In disordered or weakly ordered layers, the relaxation takes place though perfect 1/2 [101] dislocations, whereas well-ordered films relax through the partial 1/6[112] Shockley dislocations, piled-up within microtwins, with a huge impact on both the morphology and the magnetic properties of the film. We show that the antiphase boundary energy is the key factor preventing the propagation of perfect dislocations in ordered alloys.
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页码：1 / 5
页数：5
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