Shunt-analysis of epitaxial silicon thin-film solar cells by lock-in thermography

被引：5

作者：

Bau, S ^{[1
]}

Huljic, DM ^{[1
]}

Isenberg, J ^{[1
]}

Rentsch, J ^{[1
]}

机构：

[1] Fraunhofer Inst Solar Energy Syst, ISE, D-79110 Freiburg, Germany

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190856

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Lock-in thermography has been applied for shunt-analysis on epitaxial silicon thin-film solar cells. The solar cell material was made by epitaxial deposition of the base layer on highly doped monocrystalline (Czochralski) and multicrystalline silicon substrates in an APCVD-system. Solar cells were prepared in a laboratory-type and an industrial-type process. Characterization of the solar cells by infrared Lock-in thermography and microscopy revealed a clear correlation between shunts and epitaxial defects in case of the lab-type solar cells. Furthermore an increased concentration of shunts located under the emitter grid lines of the industrial-type solar cells compared to the lab-type solar cells was observed. The analysis by thermography thus gave insight into the quality of the epitaxial layers and into problems concerning-a transfer of the solar cell process from laboratory to industrial scale manufacturing.

引用

页码：1335 / 1338

页数：4

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