Cu depletion at the CuInSe2 surface

被引：104

作者：

Liao, DX ^{[1
]}

Rockett, A ^{[1
]}

机构：

[1] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 17期

关键词：

D O I：

10.1063/1.1570516

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The chemical composition of the (112)B surface of epitaxial CuInSe2 thin films is investigated by angle resolved x-ray photoelectron spectroscopy. Results show that a severe Cu depletion exists in the top 1-2 atomic layers. No bulk second phase is found at the surface. The source of this depletion and its relation to the Cd doping at the CdS/CuInSe2 interface are discussed. (C) 2003 American Institute of Physics.

引用

页码：2829 / 2831

页数：3

共 15 条

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