Real time technique to measure the electrical resistivity of ultrathin films during growth in plasma environments

被引：13

作者：

Barnat, EV ^{[1
]}

Nagakura, D

Lu, TM

机构：

[1] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

[2] Rensselaer Polytech Inst, Ctr Integrated Elect & Elect Mfg, Troy, NY 12180 USA

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2003年 / 74卷 / 07期

关键词：

D O I：

10.1063/1.1556947

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A technique used to obtain the evolution of the electrical resistivity of ultrathin films during growth in a plasma environment is described. Details are given on the physical construction of the substrate assembly that house specially prepared substrates used for film growth. Discussion on the considerations that were needed for proper design of the circuitry to minimize or eliminate the effects of the plasma and any electrode bias on the measurement of the resistivity is given. Operation of the final design is demonstrated through measurements of the current and induced voltages obtained in real time for ultrathin copper sputter deposited onto silicon dioxide. The measured signals are then used to calculate the resistivity as a function of the thickness of the film. (C) 2003 American Institute of Physics.

引用

页码：3385 / 3389

页数：5