Alkyl-Chain-Length-Independent Hole Mobility via Morphological Control with Poly(3-alkylthiophene) Nanofibers

被引：90

作者：

Oosterbaan, Wibren D. ^{[1
]}

Bolsee, Jean-Christophe ^{[1
]}

Gadisa, Abay ^{[1
,4
]}

Vrindts, Veerle

Bertho, Sabine ^{[1
]}

D'Haen, Jan ^{[1
]}

Cleij, Thomas J. ^{[1
]}

Lutsen, Laurence ^{[4
]}

McNeill, Christopher R. ^{[2
]}

Thomsen, Lars ^{[3
]}

Manca, Jean V. ^{[1
,4
]}

Vanderzande, Dirk ^{[1
,4
]}

机构：

[1] Hasselt Univ, Inst Mat Res, B-3590 Diepenbeek, Belgium

[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[3] Australian Synchrotron, Clayton, Vic 3168, Australia

[4] IMEC IMOMEC, B-3590 Diepenbeek, Belgium

来源：

ADVANCED FUNCTIONAL MATERIALS | 2010年 / 20卷 / 05期

基金：

英国工程与自然科学研究理事会;

关键词：

FIELD-EFFECT MOBILITY; CHARGE-TRANSPORT; SOLAR-CELLS; THIN-FILMS; MOLECULAR-WEIGHT; POLYMER; POLY(3-HEXYLTHIOPHENE); PERFORMANCE; TRANSISTORS; ABSORPTION;

D O I：

10.1002/adfm.200901471

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The field-effect transistor (FET) and diode characteristics of poly(3-alkylthiophene) (P3AT) nanofiber layers deposited from nanofiber dispersions are presented and compared with those of layers deposited from molecularly dissolved polymer solutions in chlorobenzene. The P3AT n-alkyl-side-chain length was varied from 4 to 9 carbon atoms. The hole mobilities are correlated with the interface and bulk morphology of the layers as determined by UV-vis spectroscopy, transmission electron microscopy (TEM) with selected area electron diffraction (SAED), atomic force microscopy (AFM), and polarized carbon K-edge near edge X-ray absorption fine structure (NEXAFS) spectroscopy. The latter technique reveals the average polymer orientation in the accumulation region of the FET at the interface with the SiO2 gate dielectric. The previously observed alkyl-chain-length-dependence of the FET mobility in P3AT films results from differences in molecular ordering and orientation at the dielectric/semiconductor interface, and it is concluded that side-chain length does not determine the intrinsic mobility of P3ATs, but rather the alkyl chain length of P3ATs influences FET (diode) mobility only through changes in interfacial (bulk) ordering in solution processed films.

引用

页码：792 / 802

页数：11

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