Evidence of polariton stimulation in semiconductor microcavities

被引:49
作者
Boeuf, F [1 ]
André, R
Romestain, R
Dang, LS
Peronne, E
Lampin, JF
Hulin, D
Alexandrou, A
机构
[1] Univ Grenoble 1, CNRS, UMR 5588, Spectrometrie Phys Lab, F-38402 St Martin Dheres, France
[2] Ecole Polytech, ENSTA, CNRS, Lab Opt Appl,UMR 7639, F-91761 Palaiseau, France
来源
PHYSICAL REVIEW B | 2000年 / 62卷 / 04期
关键词
D O I
10.1103/PhysRevB.62.R2279
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The stimulated photoluminescence of the lower polariton in CdTe microcavities is studied at low temperature, using nonresonant excitation. The stimulation threshold is found to be independent of the number of quantum wells in the microcavities, which rules out the stimulation model based on population inversion of either localized excitons or electron-hole plasma. On the other hand, the final state stimulation deriving from boson statistics, or boser effect, is clearly evidenced by tuning the lower polariton to one LO phonon below the exciton reservoir. For detunings closer to zero, the stimulation is dominated by another physical mechanism, that could be the exciton-exciton scattering into the upper and lower polariton states.
引用
收藏
页码:R2279 / R2282
页数:4
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