Field emission from carbon nanosheets on pyramidal Si(100)

被引：21

作者：

Chen, M. Y.

Yeh, C. M.

Syu, J. S.

Hwang, J. ^{[1
]}

Kou, C. S.

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[2] Natl Tsing Hua Univ, Dept Phys, Hsinchu, Taiwan

来源：

NANOTECHNOLOGY | 2007年 / 18卷 / 18期

关键词：

Catalysts - Current density - Field emission - Microwaves - Plasma enhanced chemical vapor deposition - Silicon - Synthesis (chemical);

D O I：

10.1088/0957-4484/18/18/185706

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Carbon nanosheets were synthesized on pyramidal Si( 100) substrates without any catalyst in a microwave plasma-enhanced chemical vapour deposition process. The average length and the growth time of carbon nanosheets were measured to be similar to 300 nm and 10 min, equivalent to a growth rate of similar to 30 nm min(-1). By replacing flat Si( 100) with pyramidal Si( 100) as the substrate, the field emission performance of carbon nanosheets was greatly improved. A low turn-on field of 3.2 V mu m(-1) and a high current density of 2.5 mA cm(-2) at 7.0 V mu m(-1), close to those of carbon nanotube emitters, were achieved. The improvement in field emission was attributed primarily to the pyramidal shape.

引用

页数：4

共 20 条

[1] Field emission from carbon nanotubes:: the first five years [J].