Metastability of oxygen donors in AlGaN

被引:160
作者
McCluskey, MD [1 ]
Johnson, NM
Van de Walle, CG
Bour, DP
Kneissl, M
Walukiewicz, W
机构
[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA
[2] Lawrence Berkeley Natl Lab, Ctr Adv Mat, Berkeley, CA 94720 USA
关键词
D O I
10.1103/PhysRevLett.80.4008
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Experimental and theoretical evidence is presented for the metastability of oxygen donors in AlxGa1-xN. As the aluminum content increases, Hall effect measurements reveal an increase in the electron activation energy, consistent with the emergence of a deep DX level from the conduction band. Persistent photoconductivity is observed in Al0.39Ga0.61N:O at temperatures below 150 K after exposure to light, with an optical threshold energy of 1.3 eV. A configuration coordinate diagram is obtained from first-principles calculations and yields values for the capture barrier, emission barrier, and optical threshold which are in good agreement with the experimental results.
引用
收藏
页码:4008 / 4011
页数:4
相关论文
共 26 条
[1]  
Beadie G, 1997, APPL PHYS LETT, V71, P1092, DOI 10.1063/1.119924
[2]  
BLAKEMORE JS, 1987, SEMICONDUCTOR STAT, P134
[3]   METASTABILITY OF THE ISOLATED ARSENIC-ANTISITE DEFECT IN GAAS [J].
CHADI, DJ ;
CHANG, KJ .
PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2187-2190
[4]   THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J].
CHADI, DJ ;
CHANG, KJ .
PHYSICAL REVIEW LETTERS, 1988, 61 (07) :873-876
[5]   Persistent photoconductivity in n-type GaN [J].
Chen, HM ;
Chen, YF ;
Lee, MC ;
Feng, MS .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (02) :899-901
[6]  
Gotz W, 1997, MATER RES SOC SYMP P, V449, P525
[7]   Persistent photoconductivity in n-type GaN [J].
Hirsch, MT ;
Wolk, JA ;
Walukiewicz, W ;
Haller, EE .
APPLIED PHYSICS LETTERS, 1997, 71 (08) :1098-1100
[8]   WAVE-FUNCTIONS AND OPTICAL CROSS-SECTIONS ASSOCIATED WITH DEEP CENTERS IN SEMICONDUCTORS [J].
JAROS, M .
PHYSICAL REVIEW B, 1977, 16 (08) :3694-3706
[9]   Metastability and persistent photoconductivity in Mg-doped p-type GaN [J].
Johnson, C ;
Lin, JY ;
Jiang, HX ;
Khan, MA ;
Sun, CJ .
APPLIED PHYSICS LETTERS, 1996, 68 (13) :1808-1810
[10]   TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].
LANG, DV ;
LOGAN, RA ;
JAROS, M .
PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030