Highly stable dye-sensitized solid-state solar cell with the semiconductor 4CuBr 3S(C4H9)2 as the hole collector

被引:82
作者
Tennakone, K [1 ]
Senadeera, GKR [1 ]
De Silva, DBRA [1 ]
Kottegoda, IRM [1 ]
机构
[1] Inst Fundamental Studies, Kandy, Sri Lanka
关键词
D O I
10.1063/1.1312858
中图分类号
O59 [应用物理学];
学科分类号
摘要
Construction of a dye-sensitized solid-state solar cell with the semiconductor 4CuBr 3S(C4H9)(2) as the hole collector is reported. The cell is unusually stable compared to dye-sensitized solid state cells reported previously and delivers a short-circuit photocurrent and an open-circuit voltage of similar to 4.3 mA cm(-2) and 400 mV respectively, at 1.5 air mass, 1000 W m(-2) sunlight. (C) 2000 American Institute of Physics. [S0003-6951(00)03139-9].
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页码:2367 / 2369
页数:3
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