Antiferromagnetic metallic state in doped manganites

被引：153

作者：

Akimoto, T

Maruyama, Y

Moritomo, Y ^{[1
]}

Nakamura, A

Hirota, K

Ohoyama, K

Ohashi, M

机构：

[1] Nagoya Univ, CIRSE, Nagoya, Aichi 46401, Japan

[2] Nagoya Univ, Dept Appl Phys, Nagoya, Aichi 46401, Japan

[3] Tohoku Univ, Dept Phys, Sendai, Miyagi 98077, Japan

[4] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 98077, Japan

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.57.R5594

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electronic and magnetic properties are systematically investigated for doped manganites R1(1-x)Sr(x)MnO(3) (R = La1-zNdz) by changing the nominal hole concentration x and the averaged ionic radius of the perovskite A site (z), or the one-electron bandwidth W. In the heavily doped region (x greater than or equal to 0.50), we observed a layered-type (A-type) antiferromagnetic state with metallic conductivity (rho approximate to 4X10(-4) Omega cm at 5 K for La0.46Sr0.54MnO3). This observation suggests that the antiferromagnetic metallic (AFM) state is the alternative ground state for doped manganites, besides the ferromagnetic metallic (FM) state.

引用

页码：R5594 / R5597

页数：4

共 20 条

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