Simulation toolbox and material parameter data base for CMOS MEMS

被引:3
作者
Baltes, H
Paul, O
Korvink, JG
机构
来源
MHS '96 - PROCEEDINGS OF THE SEVENTH INTERNATIONAL SYMPOSIUM ON MICRO MACHINE AND HUMAN SCIENCE: TOWARD MICRO-MECHATRONICS IN 21ST CENTURY | 1996年
关键词
D O I
10.1109/MHS.1996.563393
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
The CMOS MEMS CAD tools SOLIDIS and ICMAT are presented. The data base ICMAT is obtained from measuring process-dependent CMOS thin film electrical, magnetic, thermal, and mechanical properties by using dedicated materials characterization microstructures. ICMAT is illustrated by thermophysical and mechanical properties of various CMOS layers and novel characterization structures for the thermopower of CMOS polysilicon and the heat capacity of CMOS layer sandwiches. The toolbox SOLIDIS provides coupled numerical modeling of the electrical, magnetic, and mechanical phenomena, and the boundary and interface conditions occurring in Microsystem Technology Computer Aided Design, or mu TCAD, in a uniform and consistent environment. An outline of mu TCAD and MEMS device simulation is given with a magnetic sensor and a deflectable micromirror serving as examples.
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页码:1 / 8
页数:4
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