Integration of unit processes in a shallow trench isolation module for a 0.25 μm complementary metal-oxide semiconductor technology

被引：25

作者：

Chatterjee, A ^{[1
]}

Ali, I ^{[1
]}

Joyner, K ^{[1
]}

Mercer, D ^{[1
]}

Kuehne, J ^{[1
]}

Mason, M ^{[1
]}

Esquivel, A ^{[1
]}

Rogers, D ^{[1
]}

O'Brien, S ^{[1
]}

Mei, P ^{[1
]}

Murtaza, S ^{[1
]}

Kwok, SP ^{[1
]}

Taylor, K ^{[1
]}

Nag, S ^{[1
]}

Hames, G ^{[1
]}

Hanratty, M ^{[1
]}

Marchman, H ^{[1
]}

Ashburn, S ^{[1
]}

Chen, IC ^{[1
]}

机构：

[1] Texas Instruments Inc, Semicond Proc & Device Ctr, Dallas, TX 75265 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1997年 / 15卷 / 06期

关键词：

D O I：

10.1116/1.589581

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article presents a study of the issues in integrating the pattern, fill, planarization, and surface cleanup processes to design a shallow trench isolation (STI) flow suitable for 0.25 mu m complementary metal-oxide semiconductor technologies. Technological choices and their effects on the characteristics of the STI technology are discussed. Experimental data are presented to illustrate how process choices at various stages of the STI flow are made to optimize the STI structure. (C) 1997 American Vacuum Society.

引用

页码：1936 / 1942

页数：7

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