Adsorption of thiophene on a Si(001)-2 x 1 surface studied by photoelectron spectroscopy and diffraction

被引：10

作者：

Shimomura, A ^{[1
]}

Ikejima, Y

Yajima, K

Yagi, T

Goto, T

Gunnella, R

Abukawa, T

Fukuda, Y

Kono, S

机构：

[1] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan

[2] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan

[3] Univ Camerino, UdR INFM, Dept Phys, I-62032 Camerino, Italy

来源：

APPLIED SURFACE SCIENCE | 2004年 / 237卷 / 1-4期

关键词：

thiophene; silicon; surface structure; photoelectron spectroscopy; photoelectron diffraction;

D O I：

10.1016/j.apsusc.2004.06.084

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Chemisorption of thiophene on a Si(0 0 1) surface has been studied by synchrotron radiation induced photoelectron spectroscopy (SRPES). Two adsorption-related components in Si 2p and S 2p spectra are observed after exposure of thiophene. It is suggested that the two components of Si 2p are ascribed to silicon bonded to hydrocarbon and sulfur. The core-level shift resolved photoelectron diffraction (PED) result indicates that the low-kinetic-energy component of S 2p can be ascribed to 2,5-dihydrothiophehe (DHT)-like species. Another S 2p component could be assigned to dissociated sulfur based on the results of PED and time evolution of the spectrum under irradiation. These assignments are consistent with the core-level shift of S 2p. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：75 / 79

页数：5

共 7 条

[1] Convergence and reliability of the Rehr-Albers formalism in multiple-scattering calculations of photoelectron diffraction [J].

Chen, Y ;

de Abajo, FJG ;

Chasse, A ;

Ynzunza, RX ;

Kaduwela, AP ;

Van Hove, MA ;

Fadley, CS .

PHYSICAL REVIEW B, 1998, 58 (19) :13121-13131

[2] The surface as molecular reagent: organic chemistry at the semiconductor interface [J].

Filler, MA ;

Bent, SF .

PROGRESS IN SURFACE SCIENCE, 2003, 73 (1-3) :1-56

[3] CORE-LEVEL SPECTROSCOPY OF THE CLEAN SI(001) SURFACE - CHARGE-TRANSFER WITHIN ASYMMETRIC DIMERS OF THE 2X1 AND C(4X2) RECONSTRUCTIONS [J].

LANDEMARK, E ;

KARLSSON, CJ ;

CHAO, YC ;

UHRBERG, RIG .

PHYSICAL REVIEW LETTERS, 1992, 69 (10) :1588-1591

[4] Chemisorption and decomposition of thiophene and furan on the Si(100)-2 x 1 surface: A quantum chemical study [J].

Lu, X ;

Xu, X ;

Wang, NQ ;

Zhang, Q ;

Lin, MC .

JOURNAL OF PHYSICAL CHEMISTRY B, 2001, 105 (41) :10069-10075

[5] Electronic and vibrational properties of thiophene on Si(100) [J].

Qiao, MH ;

Cao, Y ;

Tao, F ;

Liu, Q ;

Deng, JF ;

Xu, GQ .

JOURNAL OF PHYSICAL CHEMISTRY B, 2000, 104 (47) :11211-11219

[6] Photoemission studies of the surface reactivity of thiophene on Si(100)-(2x1), Si(111)-(7x7) and Ge(100)-(2x1) [J].

Rousseau, GBD ;

Dhanak, V ;

Kadodwala, M .

SURFACE SCIENCE, 2001, 494 (03) :251-264

[7] High resolution Si 2p photoelectron spectroscopy of unsaturated hydrocarbon molecules adsorbed on Si(100)c(4X2): the interface bonding and charge transfer between the molecule and the Si substrate [J].

Yamashita, Y ;

Nagao, M ;

Machida, S ;

Hamaguchi, K ;

Yasui, F ;

Mukai, K ;

Yoshinobu, J .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 2001, 114 :389-393

← 1 →