Low interface state density oxides on p-type SiC

Both thermal and deposited oxides on p-type 6H-SiC are improved with a re-oxidation anneal in a wet ambient. MOSFETs with mobilities of 72 cm(2)/V-s are demonstrated. Thermal oxidation of 6H p-type SiC in a steam ambient is used to create MOS capacitors which have minimum interface state densities below 3x10(10) cm(-2)/eV, which is the lowest reported to date for p-type SiC. These levels are shown on Si-face p-type material for both the 6H and 4H polytypes. The critical parameters appear to be oxidation temperature and use of the re-oxidation anneal.