Monte Carlo simulation of electron transport in wurtzite aluminum nitride

被引:61
作者
O'Leary, SK [1 ]
Foutz, BE
Shur, MS
Bhapkar, UV
Eastman, LF
机构
[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
[2] Cornell Univ, Sch Elect Engn, Ithaca, NY 14853 USA
[3] USN, Ctr Surface Warfare, Dahlgren, VA 22448 USA
关键词
semiconductors; electronic transport;
D O I
10.1016/S0038-1098(97)10207-1
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We present the steady-state, velocity-field characteristics of wurtzite aluminum nitride, determined using an ensemble Monte Carlo approach. A three valley model for the conduction band is employed and ionized impurity, polar optical phonon, piezoelectric, deformation potential and intervalley scattering mechanisms are considered. We find that aluminum nitride exhibits peak and saturation drift velocities of 1.7 x 10(7) cm s(-1) and 1.4 x 10(7) cm s(-1), respectively, at a temperature of 300 K and a doping concentration of 1.0 x 10(17) cm(-3). The sensitivity of these steady-state results to variations in temperature and doping concentration is examined and is found to be much less than that of gallium arsenide. We also explore the sensitivity of our results to variations in the piezoelectric constant and demonstrate that piezoelectric scattering plays a significant role in determining the form of the wurtzite aluminum nitride velocity-field characteristic. (C) 1998 Elsevier Science Ltd.
引用
收藏
页码:621 / 626
页数:6
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