Transport analysis for polycrystalline silicon solar cells on glass substrates

被引：9

作者：

Brendel, R ^{[1
]}

Bergmann, RB ^{[1
]}

Fischer, B ^{[1
]}

Krinke, J ^{[1
]}

Plieninger, R ^{[1
]}

Rau, U ^{[1
]}

Reiss, J ^{[1
]}

Strunk, HP ^{[1
]}

Wanka, H ^{[1
]}

Werner, JH ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年

关键词：

D O I：

10.1109/PVSC.1997.654169

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We fabricate polycrystalline silicon solar cells on glass by Si deposition on solid phase crystallized seed layers and derive an effective diffusion length L-eff,L-QE = 3 mu m from quantum efficiency measurements. Three-dimensional transport modeling reveals that L-eff,L-QE differs from the diffusion length L-eff,L-IV in the diode saturation current j(o)=(q n(i)(2)D)/(N-A L-eff,L-IV). Here q, n(i), D, and N-A denote the elementary charge, intrinsic carrier concentration, diffusion constant and doping concentration, respectively. However, the difference is small for our polycrystalline Si cells. Dominant recombination in the space charge region limits the open circuit voltage to 340 mV.

引用

页码：635 / 638

页数：4