Growth and characterization of CdZn(S1-xSex)2 alloy film deposited by solution growth technique

被引：20

作者：

Chavhan, S. D. ^{[1
]}

Bagul, S. V. ^{[1
]}

Ahire, R. R. ^{[1
]}

Deshpande, N. G. ^{[1
]}

Sagade, A. A. ^{[1
]}

Gudage, Y. G. ^{[1
]}

Sharma, Ramphal ^{[1
]}

机构：

[1] Dr Babasaheb Ambedkar Marathwada Univ, Dept Phys, Thin Film & Nanotechnol Lab, Aurangabad 431004, Maharashtra, India

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2007年 / 436卷 / 1-2期

关键词：

CdZn(S1-xSex)(2); photovoltaic; solution growth technique;

D O I：

10.1016/j.jallcom.2006.09.126

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The n-CdZn(S1-xSex)(2) thin films have been deposited by solution growth technique. The various deposition parameters such as pH of solution (10.5), time, concentration of ions and temperature have been optimized. In order to achieve uniform films, triethanolamine (TEA) has been used. The as deposited films have been annealed in rapid thermal annealing (RTA) system at 250 degrees C in air for 5 min. The surface morphology, compositional ratio, structural properties have been studied by SEM, EDAX and XRD techniques, respectively. The XRD study shows that all the films are of polycrystalline in nature and exhibits the hexagonal and cubic structure for the composition x = 0.0-0.7 and x > 0.7, respectively. For hexagonal structure, the lattice constants 'a' varies from 4.13 angstrom to 4.04 angstrom and 'c' = 6.615 angstrom to 6.514 angstrom and for cubic structure 'a' varies from 5.629 angstrom to 5.598 angstrom. The absorption coefficient 'alpha' varies in the range 2 x 10(4) cm(-1) to 17 x 10(4) cm(-1). Band gap values were calculated from the transmittance spectra, which showed a non-linear variation with respect to composition 'x'. (C) 2006 Elsevier B.V. All rights reserved.

引用

页码：400 / 406

页数：7

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