Simulations of deep level related lock-on conductivity in SiC diodes subject to ultrafast, high voltage reverse biasing pulses

被引：3

作者：

Joshi, RP ^{[1
]}

Fazi, C

机构：

[1] Old Dominion Univ, Dept Elect & Comp Engn, Norfolk, VA 23529 USA

[2] USA, Res Lab, Adelphi, MD 20783 USA

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 25期

关键词：

silicon carbide; power semiconductor devices;

D O I：

10.1049/el:19971462

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Numerical simulations of the transient response of reverse hissed silicon carbide (SiC) diodes to fast voltage pulses have been performed. The results obtained reveal that 'deep-defects' can lead to high device currents and persistent conductivity, in keeping with experimental observations. The presence of such levels would be potentially detrimental to device stability.

引用

页码：2162 / 2163

页数：2

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