Effect of oxygen vacancies in the SrTiO3 substrate on the electrical properties of the LaAlO3/SrTiO3 interface

被引：641

作者：

Kalabukhov, Alexey ^{[1
]}

Gunnarsson, Robert

Borjesson, Johan

Olsson, Eva

Claeson, Tord

Winkler, Dag

机构：

[1] Chalmers, Dept Microtechnol & Nanosci, MC2, S-41296 Gothenburg, Sweden

[2] Chalmers, Dept Appl Phys, S-41296 Gothenburg, Sweden

来源：

PHYSICAL REVIEW B | 2007年 / 75卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.75.121404

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We experimentally investigated optical, electrical, and microstructural properties of heterointerfaces between two thin-film perovskite insulating materials, SrTiO3 (STO) and LaAlO3 (LAO), deposited at different oxygen pressure conditions. Cathode and photoluminescence experiments show that oxygen vacancies are formed in the bulk STO substrate during the growth of LAO films, resulting in high electrical conductivity and mobility values. In both high and low oxygen pressure interfaces, the electrical Hall mobilities follow a similar power-law dependence as observed in oxygen reduced STO bulk samples. The results are confirmed on a microscopic level by local strain fields at the interface reaching 10 nm into the STO substrate.

引用

页数：4

共 31 条

[1] OPTICAL GAP OF STRONTIUM TITANATE (DEVIATION FROM URBACH TAIL BEHAVIOR) [J].

CAPIZZI, M ;

FROVA, A .

PHYSICAL REVIEW LETTERS, 1970, 25 (18) :1298-&

[2] OXYGEN-ION MIGRATION IN PEROVSKITE-TYPE OXIDES [J].

CHERRY, M ;

ISLAM, MS ;

CATLOW, CRA .

JOURNAL OF SOLID STATE CHEMISTRY, 1995, 118 (01) :125-132

[3]

*EPAPS, EPRBMDO75R02712 EPAP

[4] SHUBNIKOV-DE HAAS EFFECT IN SRTIO3 [J].

FREDERIKSE, HP ;

HOSLER, WR ;

THURBER, WR ;

BABISKIN, J ;

SIEBENMANN, PG .

PHYSICAL REVIEW, 1967, 158 (03) :775-+

[5] ELECTRONIC TRANSPORT IN STRONTIUM TITANATE [J].

FREDERIKSE, HPR ;

THURBER, WR ;

HOSLER, WR .

PHYSICAL REVIEW, 1964, 134 (2A) :A442-+

[6] Transformation processes in LaAlO3:: Neutron diffraction, dielectric, thermal, optical, and Raman studies -: art. no. 054110 [J].

Hayward, SA ;

Morrison, FD ;

Redfern, SAT ;

Salje, EKH ;

Scott, JF ;

Knight, KS ;

Tarantino, S ;

Glazer, AM ;

Shuvaeva, V ;

Daniel, P ;

Zhang, M ;

Carpenter, MA .

PHYSICAL REVIEW B, 2005, 72 (05)

[7] SURFACE DEFECTS AND ELECTRONIC-STRUCTURE OF SRTIO3 SURFACES [J].

HENRICH, VE ;

DRESSELHAUS, G ;

ZEIGER, HJ .

PHYSICAL REVIEW B, 1978, 17 (12) :4908-4921

[8] Full oxide heterostructure combining a high-TC diluted ferromagnet with a high-mobility conductor [J].

Herranz, G ;

Basletic, M ;

Bibes, M ;

Ranchal, R ;

Hamzic, A ;

Tafra, E ;

Bouzehouane, K ;

Jacquet, E ;

Contour, JP ;

Barthélémy, A ;

Fert, A .

PHYSICAL REVIEW B, 2006, 73 (06)

[9]

HERRANZ G, CONDMAT0606182

[10] Electronically coupled complementary interfaces between perovskite band insulators [J].

Huijben, Mark ;

Rijnders, Guus ;

Blank, Dave H. A. ;

Bals, Sara ;

Van Aert, Sandra ;

Verbeeck, Jo ;

Van Tendeloo, Gustaaf ;

Brinkman, Alexander ;

Hilgenkamp, Hans .

NATURE MATERIALS, 2006, 5 (07) :556-560

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