A high temperature stable metallization scheme for SiC-technology operating at 400°C in air

被引：5

作者：

Gottfried, K ^{[1
]}

Fritsche, H

Kriz, J

Leibelt, J

Kaufmann, C

Rudolf, F

Gessner, T

机构：

[1] Chemnitz Univ Technol, Ctr Microtechnol, D-09107 Chemnitz, Germany

[2] Dresden Univ Technol, Lab Semicond Technol & Microsyst, D-01062 Dresden, Germany

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

metallization scheme; ohmic contacts; high temperature stability; TIW;

D O I：

10.4028/www.scientific.net/MSF.264-268.795

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A complete metallization scheme for high temperature applications based on SIC is investigated. TiW is used for the ohmic contact to the substrate, because of its low contact resistance and its thermodynamical stability regarding the SiC interface. For the on chip interconnections TiW is used, too. Furthermore it is shown, that Aluminum (Al) is a promising material for the encapsulation and for the connections to the next wiring level at temperatures up to 400 degrees C. These connections can be realized by different technologies using a thick wire with 250 mu m diameter. No device degradation, no material intermixing and no changes in the electrical properties were found for all samples that were stored for 560 hours at 400 degrees C in a furnace at air.

引用

页码：795 / 798

页数：4

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