Capacitance and admittance spectroscopy analysis of hydrogen-degraded Pt/(Ba, Sr)TiO3/Pt thin-film capacitors

被引：40

作者：

Liedtke, R ^{[1
]}

Grossmann, M ^{[1
]}

Waser, R ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech, D-52056 Aachen, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 13期

关键词：

D O I：

10.1063/1.1311946

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

One of the problems occurring in conjunction with the integration of Ba0.7Sr0.3TiO3 (BST) thin film capacitors into the Si technology is the large increase of leakage current after a forming gas heat treatment. In order to reveal the underlying mechanism, we studied the electric properties of Pt/BST/Pt (metal-insulator-metal) (MIM) structures after annealing in atmospheres containing hydrogen (H-2) or carbon monoxide by means of admittance spectroscopy. Frequency-dependent capacitance measurements on these MIM structures revealed a thermally activated relaxation step at low frequencies with an activation energy of 0.62 eV. Admittance spectroscopy, in which the conductance is monitored as a function of temperature and frequency, verifies the Schottky barrier heights at the Pt/BST interface revealed by dc measurements. We found that the Schottky barrier height decreased by 0.4 eV after annealing in a reducing atmosphere, independent of the presence of protons. (C) 2000 American Institute of Physics. [S0003- 6951(00)00139-X].

引用

页码：2045 / 2047

页数：3

共 15 条

[1] Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh-density dynamic random access memories [J].

Dietz, GW ;

Schumacher, M ;

Waser, R ;

Streiffer, SK ;

Basceri, C ;

Kingon, AI .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) :2359-2364

[2] The effects of forming gas anneal on the electrical characteristics of Ir-electroded BST thin film capacitors [J].

Hadad, D ;

Chen, TS ;

Balu, V ;

Jiang, B ;

Kuah, SH ;

McIntyre, P ;

Summerfelt, S ;

Anthony, JM ;

Lee, JC .

INTEGRATED FERROELECTRICS, 1997, 17 (1-4) :461-469

[3] Electrode dependence of hydrogen-induced degradation in ferroelectric Pb(Zr,Ti)O-3 and SrBi2Ta2O9 thin films [J].

Han, JP ;

Ma, TP .

APPLIED PHYSICS LETTERS, 1997, 71 (09) :1267-1269

[4] Influence of precursor chemistry on the formation of MTiO3 (M = Ba, Sr) ceramic thin films [J].

Hasenkox, U ;

Hoffmann, S ;

Waser, R .

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 1998, 12 (02) :67-79

[5] Depletion layer thickness and Schottky type carrier injection at the interface between Pt electrodes and (Ba, Sr)TiO3 thin films [J].

Hwang, CS ;

Lee, BT ;

Kang, CS ;

Lee, KH ;

Cho, HJ ;

Hideki, H ;

Kim, WD ;

Lee, SI ;

Lee, MY .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (01) :287-295

[6] SrTiO3 thin films by MOCVD for 1 Gbit DRAM application [J].

Lesaicherre, PY ;

Yamaguchi, H ;

Miyasaka, Y ;

Watanabe, H ;

Ono, H ;

Yoshida, M .

INTEGRATED FERROELECTRICS, 1995, 8 (1-2) :201-+

[7]

LIEDTKE R, 1999, P SEM ADV FUT EL SAF

[8] Electronic properties of ideal and interface-modified metal-semiconductor interfaces [J].

Monch, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (04) :2985-2993

[9]

Neumann H., 1986, Ferroelectrics, V69, P179, DOI 10.1080/00150198608008191

[10] Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate [J].

Robertson, J ;

Chen, CW .

APPLIED PHYSICS LETTERS, 1999, 74 (08) :1168-1170

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