Effect of nitrogen doping on the electron field emission properties of chemical vapor deposited diamond films

被引：31

作者：

Shih, CF

Liu, KS

Lin, IN ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Ctr Mat Sci, Hsinchu 300, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

关键词：

nitrogen doping; diamond films; electron field emission;

D O I：

10.1016/S0925-9635(00)00309-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nitrogen-doped diamond films were successfully synthesized using a urea/methanol saturated solution as a nitrogen source. Scanning electron microscopy (SEM) and Raman spectroscopy revealed that the morphology and quality of the diamond films were not altered due to nitrogen doping. However, increasing the urea/methanol ratio in gas mixture markedly influences the field emission properties of diamond films, which were optimized when the films were grown using H-2/CH4/urea = 300:18:6 seem . The electron field emission of the films can be turned at a low field as 5.0 V mu m(-1) and the emission current density as large as J(e) = 1019 mu A cm(-2) can be attained at 21.6 V mu m(-1) applied field. The effective work function is phi(e) = 0.034 eV. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

引用

页码：1591 / 1599

页数：9

共 22 条

[1] INVESTIGATION OF THE HIGH-FIELD CONDUCTIVITY AND DIELECTRIC STRENGTH OF NITROGEN-CONTAINING POLYCRYSTALLINE DIAMOND FILMS [J].