Measurement of the Hall scattering factor in 4H-SiC epilayers from 40K to 290K and up to magnetic fields of nine tesla

被引：9

作者：

Rutsch, G ^{[1
]}

Devaty, RP

Langer, DW

Rowland, LB

Choyke, WJ

机构：

[1] Univ Pittsburgh, Dept Phys & Astron, Pittsburgh, PA 15260 USA

[2] Univ Pittsburgh, Dept Elect Engn, Pittsburgh, PA 15260 USA

[3] Northrop Grumman Sci & Technol Ctr, Pittsburgh, PA 15235 USA

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

Hall effect; Hall scattering factor; C-V measurements; electrical transport;

D O I：

10.4028/www.scientific.net/MSF.264-268.517

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ln order to accurately extract material properties from temperature dependent Hall measurements, it is necessary to know the Hall scattering factor (r(H)), among other material propel-ties. We present measurements of the Hall scattering factor on nitrogen doped 4H SiC epitaxial layers from 40K to room temperature in magnetic fields up to 9 Tesla. The measured effective Hall scattering factor varies from 0.91 to 1.21.

引用

页码：517 / 520

页数：4