Development of new semiconducting materials for durable high-performance air-stable organic field-effect transistors

被引：119

作者：

Takimiya, Kazuo ^{[1
]}

Kunugi, Yoshihito

Otsubo, Tetsuo

机构：

[1] Hiroshima Univ, Grad Sch Engn, Dept Appl Chem, Higashihiroshima 7398527, Japan

[2] Tokai Univ, Fac Engn, Dept Appl Chem, Hiratsuka, Kanagawa 2591292, Japan

来源：

CHEMISTRY LETTERS | 2007年 / 36卷 / 05期

关键词：

D O I：

10.1246/cl.2007.578

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

New thiophene- and selenophene-fused aromatic compounds were successfully developed as high-performance semiconducting materials for organic field-effect transistors (OFETs). Among them, the most advanced compounds designed on consideration of structure-function relationship showed durable air-stable FET performance. This article highlights the research strategy and development of these superior compounds as well as the molecular factors for the improvement of mobility, sensitivity, and stability, which are very informative for the design of practical semiconductors.

引用

收藏

页码：578 / 583

页数：6

相关论文

共 73 条

[1] n-Type organic field-effect transistors with very high electron mobility based on thiazole oligomers with trifluoromethylphenyl groups [J].

Ando, S ;

Murakami, R ;

Nishida, J ;

Tada, H ;

Inoue, Y ;

Tokito, S ;

Yamashita, Y .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (43) :14996-14997

[2] High performance n-type organic field-effect transistors based on π-electronic systems with trifluoromethylphenyl groups [J].

Ando, S ;

Nishida, JI ;

Tada, H ;

Inoue, Y ;

Tokito, S ;

Yamashita, Y .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (15) :5336-5337

[3] Novel p- and n-type organic semiconductors with an anthracene unit [J].

Ando, S ;

Nishida, J ;

Fujiwara, E ;

Tada, H ;

Inoue, Y ;

Tokito, S ;

Yamashita, Y .

CHEMISTRY OF MATERIALS, 2005, 17 (06) :1261-+

[4] Functionalized acenes and heteroacenes for organic electronics [J].

Anthony, John E. .

CHEMICAL REVIEWS, 2006, 106 (12) :5028-5048

[5] N- and P-channel transport behavior in thin film transistors based on tricyanovinyl-capped oligothiophenes [J].

Cai, Xiuyu ;

Burand, Michael W. ;

Newman, Christopher R. ;

da Silva Filho, Demetrio A. ;

Pappenfus, Ted M. ;

Bader, Mamoun M. ;

Bredas, Jean-Luc ;

Mann, Kent R. ;

Frisbie, C. Daniel .

JOURNAL OF PHYSICAL CHEMISTRY B, 2006, 110 (30) :14590-14597

[6]

Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO

[7]

2-9

[8] Field-effect transistors comprising molecular beam deposited α,ω-di-hexyl-hexathienylene and polymeric insulator [J].

Dimitrakopoulos, CD ;

Furman, BK ;

Graham, T ;

Hegde, S ;

Purushothaman, S .

SYNTHETIC METALS, 1998, 92 (01) :47-52

[9] ORGANIC TRANSISTORS - 2-DIMENSIONAL TRANSPORT AND IMPROVED ELECTRICAL CHARACTERISTICS [J].

DODABALAPUR, A ;

TORSI, L ;

KATZ, HE .

SCIENCE, 1995, 268 (5208) :270-271

[10] Synthesis and characterization of diperfluorooctyl-substituted phenylene-thiophene oligomers as n-type semiconductors. Molecular structure-film microstructure-mobility relationships, organic field-effect transistors, and transistor nonvolatile memory elements [J].

Facchetti, A ;

Letizia, J ;

Yoon, MH ;

Mushrush, M ;

Katz, HE ;

Marks, TJ .

CHEMISTRY OF MATERIALS, 2004, 16 (23) :4715-4727

← 1 2 3 4 5 6 7 8 →