Microstructural, Optical, and Electrical Properties of SnO Thin Films Prepared on Quartz via a Two-Step Method

被引：223

作者：

Liang, Ling Yan ^{[1
]}

Liu, Zhi Min ^{[1
]}

Cao, Hong Tao ^{[1
]}

Pan, Xiao Qin ^{[2
]}

机构：

[1] Chinese Acad Sci, Div Funct Mat & Nano Devices, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China

[2] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

来源：

ACS APPLIED MATERIALS & INTERFACES | 2010年 / 2卷 / 04期

关键词：

tin oxide; quantum size effect; optical band gap; p-type conductivity; thin film transistor; TIN OXIDE; HIGH-RESOLUTION; NANOPARTICLES; SUBSTRATE; SURFACE; GROWTH; ZNO; DISPROPORTIONATION; PHOTOEMISSION; OXIDATION;

D O I：

10.1021/am900838z

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A simple, cost-effective, two-step method was proposed for preparing single-phase SnO polycrystalline thin films on quartz. X-ray diffraction (XRD) analysis demonstrated that the annealed films were consisted of polycrystalline alpha-SnO phase without preferred orientation, and chemical composition analysis of the single phase in nature was analyzed using X-ray photoelectron spectroscopy (XPS). Transmittance spectra in UV-vis-IR range indicated that the average transmittance of both the as-deposited and the annealed SnO thin films was up to 70%. The optical band gap decreased from 3.20 to 2.77 eV after the annealing process, which was attributed to the crystalline size related quantum size effect. Photoluminescence (PL) spectrum of the annealed film showed only a weak peak at 585 nm, and no intrinsic optical transition emission was observed. Moreover, the p-type conductivity of SnO film was confirmed through Hall effect measurement, with Hall mobility of 1.4 cm(2) V-1 s(-1) and hole concentration of 2.8 x 10(16) cm(-3),

引用

页码：1060 / 1065

页数：6

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