Synthesis and single-crystal structural study of Cu2GeS3

被引:39
作者
deChalbaud, LM
deDelgado, GD
Delgado, JM
Mora, AE
Sagredo, V
机构
[1] UNIV LOS ANDES,FAC CIENCIAS,DEPT QUIM,MERIDA 5251,VENEZUELA
[2] UNIV LOS ANDES,FAC CIENCIAS,DEPT FIS,MERIDA 5101,VENEZUELA
关键词
semiconductors; X-ray diffraction; crystal structure;
D O I
10.1016/S0025-5408(97)00115-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Cu2GeS3, a I-2 IV VI3 semiconductor, has been prepared by solid state reaction of the constituent elements in vacuum-sealed quartz ampoules and structurally characterized using single crystal X-ray diffraction techniques. It crystallizes in the monoclinic space group Cc [No. 9], with a = 6.449(2), b = 11.319(3), c = 6.428(2) Angstrom, beta = 108.37(2)degrees, and Z = 4. This material is isotypic with Cu2SnS3, a recently reported type of structure which is based on a cubic close-packed array of sulfur atoms and can be viewed as a sphalerite super-structure. The final disagreement factors of the structure refinement carried out with SHELXL-93 were R(F) = 0.0454, wR(F-2) = 0.1087 and S = 1.103 for all 557 independent reflections merged from the 1086 reflections measured. Copyright (C) 1997 Elsevier Science Ltd.
引用
收藏
页码:1371 / 1376
页数:6
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