Broadband optical power limiting in vanadium doped Cd0.55Mn0.45Te crystals

被引：2

作者：

Trivedi, SB ^{[1
]}

Chen, RJ ^{[1
]}

Grasza, K ^{[1
]}

Kutcher, SW ^{[1
]}

Nathan, GVJ ^{[1
]}

Steier, WH ^{[1
]}

Bacher, D ^{[1
]}

Guha, S ^{[1
]}

Hood, P ^{[1
]}

机构：

[1] Brimrose Corp Amer, Baltimore, MD 21236 USA

来源：

MATERIALS FOR OPTICAL LIMITING II | 1997年 / 479卷

关键词：

D O I：

10.1557/PROC-479-179

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A variety of approaches have been used for optical limiting in the past [1-6]. A relatively new approach, an electro-optic power limiter (EOPL) has a simple and compact design, wavelength agile sensitivity, the ability to respond to coherent as well as incoherent radiation, low threshold and a large field of view (up to 15 degrees). EOPL devices allow the transmission of low intensity background radiation while simultaneously blocking the damaging high intensity beam. We have demonstrated EOPL in the past using the II-VI semiconductors CdTe:In [7,8], CdTe:V [9] and ZnTe [10]. In this paper, we are reporting on EOPL using a new ternary II-VI semiconductor Cd1-xMnxTe:V. Cd0.55Mn0.45Te is capable of limiting optical radiation from visible (0.630 mu m) to near infrared (1.5 mu m) wavelengths, which covers the wavelength ranges of both CdTe and ZnTe combined. Additionally, crystals of Cd0.55Mn0.45Te are relatively easier to grow than ZnTe. We report our preliminary results of optical limiting in Cd0.55Mn0.45Te:V al 0.780 mu m, 0.895 mu m, and 1.06 mu m, and we discuss the materials issues involved in improving and optimizing Cd1-xMnxTe for electro-optic power limiting.

引用

页码：179 / 184

页数：6