Anisotropic tuning behavior in epitaxial Ba0.5Sr0.5TiO3 thin films

被引:47
作者
Hyun, S [1 ]
Lee, JH
Kim, SS
Char, K
Park, SJ
Sok, J
Lee, EH
机构
[1] Seoul Natl Univ, Dept Phys, Seoul 151742, South Korea
[2] Seoul Natl Univ, Ctr Strongly Correlated Mat Res, Seoul 151742, South Korea
[3] Samsung Adv Inst Technol, Microelect Lab, Mat & Device Sector, Suwon 440600, South Korea
关键词
D O I
10.1063/1.1323996
中图分类号
O59 [应用物理学];
学科分类号
摘要
The tuning properties of epitaxial Ba0.5Sr0.5TiO3 (BST) thin films were investigated by a scanning microwave microscope (SMM) and an LCR meter. Although the BST films on LaAlO3 and MgO substrates showed similar tuning behavior when measured by the LCR meter at 1 MHz, remarkably different tuning properties were observed in the planar capacitors measured by SMM. The BST films on LaAlO3 substrates were hardly tuned when measured by SMM, while the BST films on MgO showed significant tuning behavior between the electrodes. We attribute these different tuning properties to the anisotropic tuning caused by the strain in BST films. This will enable the design of much improved tunable devices while minimizing the loss associated with the dielectric. (C) 2000 American Institute of Physics. [S0003-6951(00)03645-7].
引用
收藏
页码:3084 / 3086
页数:3
相关论文
共 19 条
  • [1] EPITAXIAL YBA2CU3O7-DELTA/BAXSR1-XTIO3 HETEROSTRUCTURES ON SILICON-ON-SAPPHIRE FOR TUNABLE MICROWAVE COMPONENTS
    BOIKOV, YA
    IVANOV, ZG
    KISELEV, AN
    OLSSON, E
    CLAESON, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 78 (07) : 4591 - 4595
  • [2] Large dielectric constant (ε/ε0>6000) Ba0.4Sr0.6TiO3 thin films for high-performance microwave phase shifters
    Carlson, CM
    Rivkin, TV
    Parilla, PA
    Perkins, JD
    Ginley, DS
    Kozyrev, AB
    Oshadchy, VN
    Pavlov, AS
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (14) : 1920 - 1922
  • [3] The effect of annealing on the microwave properties of Ba0.5Sr0.5TiO3 thin films
    Chang, WT
    Horwitz, JS
    Carter, AC
    Pond, JM
    Kirchoefer, SW
    Gilmore, CM
    Chrisey, DB
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (07) : 1033 - 1035
  • [4] Influence of strain on microwave dielectric properties of (Ba,Sr)TiO3 thin films
    Chang, WT
    Gilmore, CM
    Kim, WJ
    Pond, JM
    Kirchoefer, SW
    Qadri, SB
    Chirsey, DB
    Horwitz, JS
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (06) : 3044 - 3049
  • [5] Epitaxial ferroelectric Ba0.5Sr0.5TiO3 thin films for room-temperature tunable element applications
    Chen, CL
    Feng, HH
    Zhang, Z
    Brazdeikis, A
    Huang, ZJ
    Chu, WK
    Chu, CW
    Miranda, FA
    Van Keuls, FW
    Romanofsky, RR
    Liou, Y
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (03) : 412 - 414
  • [6] Dalberth MJ, 1998, MATER RES SOC SYMP P, V493, P371
  • [7] Improved low frequency and microwave dielectric response in strontium titanate thin films grown by pulsed laser ablation
    Dalberth, MJ
    Stauber, RE
    Price, JC
    Rogers, CT
    Galt, D
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (04) : 507 - 509
  • [8] GALT D, 1996, THESIS U COLORADO
  • [9] Improvement in performance of electrically tunable devices based on nonlinear dielectric SrTiO3 using a homoepitaxial LaAlO3 interlayer
    Jia, QX
    Findikoglu, AT
    Reagor, D
    Lu, P
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (07) : 897 - 899
  • [10] The effect of annealing on the structure and dielectric properties of BaxSr1-xTiO3 ferroelectric thin films
    Knauss, LA
    Pond, JM
    Horwitz, JS
    Chrisey, DB
    Mueller, CH
    Treece, R
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (01) : 25 - 27