1.2 V operation power heterojunction FET's for digital cellular applications

被引：10

作者：

Yamaguchi, K ^{[1
]}

Iwata, N

Kuzuhara, M

Takayama, Y

机构：

[1] NEC Corp Ltd, Kansai Elect Res Labs, Shiga 520, Japan

[2] NEC Corp Ltd, ULSI Device Dev Labs, Shiga 520, Japan

[3] NEC Corp Ltd, Semicond Grp, Kawasaki, Kanagawa 211, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 02期

关键词：

D O I：

10.1109/16.658667

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes 950 MHz power performance of 1.2 V drain bias operation n-AlGaAs/InGaAs/n-AlGaAs heterojunction FET's (HJFET) for personal digital cellular (PDC) applications, The fabricated HJFET with a 0.8-mu m long WSi gate exhibited an on-resistance (r(on)) of 2.1 Ohm.mm and a maximum drain current of 640 mA/mm, Operated at 1.2 V drain bias voltage, the HJFET with gate width of 28.0 mm demonstrated an output power of 30.0 dBm (1.0 W) and a power-added efficiency of 51.5% with an adjacent channel leakage power at 50 kHz off-center frequency of -50.8 dBc. Class A operation analysis, which shows a good coincidence with the measured PDC power performance, revealed that the excellent power performance with the relatively small gate width was due to the low r(on) of the fabricated HJFET.

引用

页码：361 / 365

页数：5