Spin Hall effect in the presence of spin diffusion

被引：738

作者：

Zhang, SF ^{[1
]}

机构：

[1] Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.85.393

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Hirsch [Phys. Rev. Lett. 83, 1834 (1999)] recently proposed a spin Hall effect based on the anomalous scattering mechanism in the absence of spin-flip scattering. Since the anomalous scattering causes both anomalous currents and a finite spin-diffusion length, we derive the spin Hall effect in the presence of spin diffusion from a semiclassical Boltzmann equation. When the formulation is applied to certain metals and semiconductors, the magnitude of the spin Hall voltage due to the spin accumulation is found to be much larger than that of magnetic multilayers. An experiment is proposed to measure this spin Hall effect.

引用

页码：393 / 396

页数：4

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